The relationship between structure and properties has been followed for different nanoscale forms of tungsten disulfide (2H-WS2) namely exfoliated monolayer and few-layer nanoplatelets, and nanotubes. The similarities and differences between these nanostructured materials have been examined using a combination of optical microscopy, scanning and high-resolution transmission electron microscopy (SEM and HRTEM) and atomic force microscopy (AFM). Photoluminescence (PL) and Raman spectroscopy have also been used to distinguish between monolayer and few-layer material. Strain induced phonon shifts have been followed from the changes in the positions of the A1g and E2g1 Raman bands during uniaxial deformation. This has been modelled for monolayer...
Single layer transition-metal dichalcogenides materials (MoS2, MoSe2, WS2 and WSe2) are investigated...
Transition-metal dichalcogenides (TMDs) are promising materials for optoelectronic devices. Their la...
Two-dimensional (2D) semiconducting layered materials have attracted widespread research interest re...
The relationship between structure and properties has been followed for different nanoscale forms of...
Transition-metal dichalcogenides (TMDs) nanostructures including nanotubes and monolayers have attra...
Monolayers of transition metal dichalcogenides (TMDs) have been proposed as the next generation elec...
We bring together synchrotron-based infrared and Raman spectroscopies, diamond anvil cell techniques...
We describe a facile technique based on polymer encapsulation to apply several percent (>5%) control...
Recently, a new family of 2D materials with exceptional optoelectronic properties has stormed into t...
In this paper, we report the biaxial strain induced modifications in the phonon dispersion curves of...
Since the raise of 2D materials, significant research has been dedicated to their strain-dependent e...
We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spec...
The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated b...
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challengi...
We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monol...
Single layer transition-metal dichalcogenides materials (MoS2, MoSe2, WS2 and WSe2) are investigated...
Transition-metal dichalcogenides (TMDs) are promising materials for optoelectronic devices. Their la...
Two-dimensional (2D) semiconducting layered materials have attracted widespread research interest re...
The relationship between structure and properties has been followed for different nanoscale forms of...
Transition-metal dichalcogenides (TMDs) nanostructures including nanotubes and monolayers have attra...
Monolayers of transition metal dichalcogenides (TMDs) have been proposed as the next generation elec...
We bring together synchrotron-based infrared and Raman spectroscopies, diamond anvil cell techniques...
We describe a facile technique based on polymer encapsulation to apply several percent (>5%) control...
Recently, a new family of 2D materials with exceptional optoelectronic properties has stormed into t...
In this paper, we report the biaxial strain induced modifications in the phonon dispersion curves of...
Since the raise of 2D materials, significant research has been dedicated to their strain-dependent e...
We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spec...
The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated b...
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challengi...
We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monol...
Single layer transition-metal dichalcogenides materials (MoS2, MoSe2, WS2 and WSe2) are investigated...
Transition-metal dichalcogenides (TMDs) are promising materials for optoelectronic devices. Their la...
Two-dimensional (2D) semiconducting layered materials have attracted widespread research interest re...